bss138dw document number: ds30203 rev. 12 - 2 1 of 5 www.diodes.com september 2009 ? diodes incorporated bss138dw dual n-channel enhancement mode field effect transistor features ? low on-resistance ? low gate threshold voltage ? low input capacitance ? fast switching speed ? available in lead free/rohs compliant version (note 4) ? qualified to aec-q101 standards for high reliability ? "green" device (notes 5 and 6) mechanical data ? case: sot-363 ? case material: molded plas tic. ?green? molding compound (note 6). ul flammability classification rating 94v-0 ? moisture sensitivity: level 1 per j-std-020 ? terminals: matte tin finish annealed over alloy 42 leadframe (lead free plating) solderable per mil-std-202, method 208 ? terminal connections: see diagram ? marking information: see page 3 ? ordering information: see page 3 ? weight: 0.006 grams (approximate) maximum ratings @t a = 25c unless otherwise specified characteristic symbol bss138dw units drain-source voltage v dss 50 v drain-gate voltage (note 3) v dgr 50 v gate-source voltage continuous v gss 20 v drain current (note 1) continuous i d 200 ma thermal characteristics @t a = 25c unless otherwise specified characteristic symbol bss138dw units total power dissipation (note 1) p d 200 mw thermal resistance, junction to ambient r ja 625 c/w operating and storage temperature range t j , t stg -55 to +150 c electrical characteristics @t a = 25c unless otherwise specified characteristic symbol min typ max unit test condition off characteristics (note 2) drain-source breakdown voltage bv dss 50 75 ? v v gs = 0v, i d = 250 a zero gate voltage drain current i dss ? ? 0.5 a v ds = 50v, v gs = 0v gate-body leakage i gss ? ? 100 na v gs = 20v, v ds = 0v on characteristics (note 2) gate threshold voltage v gs ( th ) 0.5 1.2 1.5 v v ds = v gs , i d = 250 a static drain-source on-resistance r ds ( on ) ? 1.4 3.5 v gs = 10v, i d = 0.22a forward transconductance g fs 100 ? ? ms v ds =25v, i d = 0.2a, f = 1.0khz dynamic characteristics input capacitance c iss ? ? 50 pf v ds = 10v, v gs = 0v, f = 1.0mhz output capacitance c oss ? ? 25 pf reverse transfer capacitance c rss ? ? 8.0 pf switching characteristics turn-on delay time t d ( on ) ? ? 20 ns v dd = 30v, i d = 0.2a, r gen = 50 turn-off delay time t d ( off ) ? ? 20 ns notes: 1. device mounted on fr-4 pcb, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on diodes inc. suggested pad layo ut document ap02001, which can be found on our website at http://www.diodes.com/ datasheets/ap02001.pdf. 2. short duration pulse test used to minimize self-heating effect. 3. r gs 20k . 4. no purposefully added lead. 5. diodes inc.'s "green" policy can be found on ou r website at http://www.diodes.c om/products/lead_free/index.php. 6. product manufactured with date code uo (week 40, 2007) and newer are built with green molding compound. product manufact ured prior to date code uo are built with non- green molding compound and may contain halogens or sb2o3 fire retardants. sot-363 top view internal schematic top view s 1 d 1 d 2 s 2 g 1 g 2
bss138dw document number: ds30203 rev. 12 - 2 2 of 5 www.diodes.com september 2009 ? diodes incorporated bss138dw 0 0.1 0.2 0.3 0.4 0.5 0.6 1 0 3 2 54 7 68 910 i, d r ain-s o u r c e c u r r en t (a) d v , drain-source voltage (v) fig. 1 drain-source current vs. drain-source voltage ds t = 25 c j v = 3.5v gs v = 3.25v gs v = 3.0v gs v = 2.75v gs v = 2.5v gs 0 v , gate-source voltage (v) fig. 2 transfer characteristics gs 0.1 0.2 0.3 0.5 0.4 0.6 0.7 0.8 011.5 0.5 2 3.5 4 4.5 2.5 3 i, d r ain-s o u r c e c u r r en t (a) d -55 c 150 c 25 c v = 1v ds 0.65 t , junction temperature (c) fig. 3 drain-source on resistance vs. junction temperature j 0.85 1.05 1.25 1.65 1.45 1.85 2.05 2.25 2.45 -55 -5 45 95 145 v = 10v gs v = 4.5v gs i = 0.5a d i = 0.075a d r , normalized drain-source on-resistance ( ) ds(on) 0 0.2 0.4 0.6 0.8 1 1.4 1.2 2 1.8 1.6 -55 -25 50 10075 v, g a t e t h r es h o ld v o l t a g e (v) gs(th) t , junction temperature (c) fig. 4 gate threshold voltage vs. junction temperature j 125 25 0 150 0 i , drain-current (a) fig. 5 drain-source on-resistance vs. drain-current d 1 2 3 4 5 6 7 8 0 0.02 0.04 0.06 0.08 0.16 0.14 0.120.1 150 c -55 c 25 c v = 2.5v gs r , drain-source on-resistance ( ) ds(on) 0 i , drain-current (a) fig. 6 drain-source on-resistance vs. drain-current d 1 2 3 5 4 6 7 8 9 0 0.05 0.1 0.2 0.15 0.25 150 c -55 c 25 c v = 2.75v gs r , d r ai n -s o u r c e o n - r esis t a n c e ( ) ds(on)
bss138dw document number: ds30203 rev. 12 - 2 3 of 5 www.diodes.com september 2009 ? diodes incorporated bss138dw 0 1 2 3 4 5 6 0 0.5 i , drain-current (a) fig. 7 drain-source on-resistance vs. drain-current d 150 c -55 c 25 c v = 4.5v gs r , d r ain-s o u r c e o n- r esis t an c e ( ) ds(on) 0 0.5 1 1.5 2 2.5 3 3.5 0 0.5 i , drain-current (a) fig. 8 drain-source on-resistance vs. drain-current d 150 c -55 c 25 c v = 10v gs r , drain-source on-resistance ( ) ds(on) i, di o de c u r r en t (a) d 0.001 0.01 0.1 1 v , diode forward voltage (v) fig. 9 body diode current vs. body diode voltage sd 0 0.2 0.4 0.6 0.8 11.2 150 c -55 c 25 c c , c a p a c i t an c e ( p f ) 1 10 100 v , drain-source voltage (v) fig. 10 capacitance vs. drain-source voltage ds 0 5 10 15 20 25 30 v = 0v f = 1mhz gs c rss c oss c iss ordering information (note 7) part number case packaging bss138dw-7-f sot-363 3000/tape & reel notes: 7. for packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. marking information date code key year 1998 1999 2000 2001 2002 2003 2004 2005 2006 2007 2008 2009 2010 2011 2012 code j k l m n p r s t u v w x y z month jan feb mar apr may jun jul aug sep oct nov dec code 1 2 3 4 5 6 7 8 9 o n d k38 = product type marking code ym = date code marking y = year (ex: n = 2002) m = month (ex: 9 = september) k38 k38 ym ym
bss138dw document number: ds30203 rev. 12 - 2 4 of 5 www.diodes.com september 2009 ? diodes incorporated bss138dw package outline dimensions suggested pad layout sot-363 dim min max a 0.10 0.30 b 1.15 1.35 c 2.00 2.20 d 0.65 typ f 0.40 0.45 h 1.80 2.20 j 0 0.10 k 0.90 1.00 l 0.25 0.40 m 0.10 0.22 0 8 all dimensions in mm dimensions value (in mm) z 2.5 g 1.3 x 0.42 y 0.6 c1 1.9 c2 0.65 a m j l d b c h k f x z y c1 c2 c2 g
bss138dw document number: ds30203 rev. 12 - 2 5 of 5 www.diodes.com september 2009 ? diodes incorporated bss138dw important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries rese rve the right to make modifications, enhanc ements, improvements, corrections or ot her changes without further notice to this document and any product descri bed herein. diodes incorporated does not assume any liability arising out of the application or use of this document or an y product described herein; neither does di odes incorporated convey any license under its patent or trademark rights, nor the rights of others. any customer or us er of this document or products described herein in such applica tions shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on diodes incorporated website, harmless against all damages. diodes incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthoriz ed sales channel. should customers purchase or use diodes inco rporated products for any unintended or una uthorized application, customers shall i ndemnify and hold diodes incorporated and its representativ es harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death a ssociated with such unintended or unauthorized application. products described herein may be covered by one or more united states, international or foreign patents pending. product names and markings noted herein may also be covered by one or more united states, international or foreign trademarks. life support diodes incorporated products are specifically not authorized for use as critical component s in life support devices or systems without the express written approval of the chief executive offi cer of diodes incorporated. as used herein: a. life support devices or syst ems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when proper ly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. b. a critical component is any component in a life support dev ice or system whose failure to perform can be reasonably expect ed to cause the failure of the life support device or to affect its safety or effectiveness. customers represent that they have all necessary expertise in the safety and regulatory ramifi cations of their life support dev ices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-rel ated requirements concerning the ir products and any use of diodes incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or s ystems-related information or support that may be provided by diodes incorporated. further, customers must fully indemnify diodes incorporate d and its representatives against any damages arisi ng out of the use of diodes incorporated pr oducts in such safety-critical, life suppor t devices or systems. copyright ? 2009, diodes incorporated www.diodes.com
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